The design procedure of a radiation sensitive switch for prevention of latchup is described in detail.

介了种用于抗闭辐射敏感开关。

An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.

从硅CMOS器件闭效应入手,提出了抑制闭种新方法—伪闭路径法。