[der] 巨
![](https://www.godic.net/tmp/wordimg/hxjJY2YBXB@@naWmYiO@@lcH3I91U=.png)
阻。GMR巨
![](https://www.godic.net/tmp/wordimg/hxjJY2YBXB@@naWmYiO@@lcH3I91U=.png)
阻
![](https://www.godic.net/tmp/wordimg/hxjJY2YBXB@@naWmYiO@@lcH3I91U=.png)
![](https://www.godic.net/tmp/wordimg/bSgWKhnTa3m6RaroBHwjf3q4P7E=.png)
利用特殊材料的电阻值随
![](https://www.godic.net/tmp/wordimg/hxjJY2YBXB@@naWmYiO@@lcH3I91U=.png)
场变化的原理来读
![](https://www.godic.net/tmp/wordimg/ajr4i0xWmyWJ74o81G5mttlZvEY=.png)
盘片上的数据,但是GMR
![](https://www.godic.net/tmp/wordimg/hxjJY2YBXB@@naWmYiO@@lcH3I91U=.png)
![](https://www.godic.net/tmp/wordimg/bSgWKhnTa3m6RaroBHwjf3q4P7E=.png)
使用了
![](https://www.godic.net/tmp/wordimg/hxjJY2YBXB@@naWmYiO@@lcH3I91U=.png)
阻效应更好的材料和多层薄膜结构,
![](https://www.godic.net/tmp/wordimg/JAg6kTeCa1jwaTAJ8URiW3DVvAI=.png)
MR
![](https://www.godic.net/tmp/wordimg/hxjJY2YBXB@@naWmYiO@@lcH3I91U=.png)
![](https://www.godic.net/tmp/wordimg/bSgWKhnTa3m6RaroBHwjf3q4P7E=.png)
更为敏感,相同的
![](https://www.godic.net/tmp/wordimg/hxjJY2YBXB@@naWmYiO@@lcH3I91U=.png)
场变化能引起更大的电阻值变化,实现更高的存储密度。
= gigantischer Magnetowiderstand
giant magnetoresistance, GMR
[der] 巨
![](https://www.godic.net/tmp/wordimg/hxjJY2YBXB@@naWmYiO@@lcH3I91U=.png)
阻。GMR巨
![](https://www.godic.net/tmp/wordimg/hxjJY2YBXB@@naWmYiO@@lcH3I91U=.png)
阻
![](https://www.godic.net/tmp/wordimg/hxjJY2YBXB@@naWmYiO@@lcH3I91U=.png)
![](https://www.godic.net/tmp/wordimg/bSgWKhnTa3m6RaroBHwjf3q4P7E=.png)
利用特殊材料的电阻值随
![](https://www.godic.net/tmp/wordimg/hxjJY2YBXB@@naWmYiO@@lcH3I91U=.png)
场变化的原理来读
![](https://www.godic.net/tmp/wordimg/ajr4i0xWmyWJ74o81G5mttlZvEY=.png)
盘片上的数据,但是GMR
![](https://www.godic.net/tmp/wordimg/hxjJY2YBXB@@naWmYiO@@lcH3I91U=.png)
![](https://www.godic.net/tmp/wordimg/bSgWKhnTa3m6RaroBHwjf3q4P7E=.png)
使用了
![](https://www.godic.net/tmp/wordimg/hxjJY2YBXB@@naWmYiO@@lcH3I91U=.png)
阻效应更好的材料和多层薄膜结构,
![](https://www.godic.net/tmp/wordimg/JAg6kTeCa1jwaTAJ8URiW3DVvAI=.png)
MR
![](https://www.godic.net/tmp/wordimg/hxjJY2YBXB@@naWmYiO@@lcH3I91U=.png)
![](https://www.godic.net/tmp/wordimg/bSgWKhnTa3m6RaroBHwjf3q4P7E=.png)
更为敏感,相同的
![](https://www.godic.net/tmp/wordimg/hxjJY2YBXB@@naWmYiO@@lcH3I91U=.png)
场变化能引起更大的电阻值变化,实现更高的存储密度。
giant magnetoresistance, GMR
德 语 助 手