Several amorphic carbon films with different thickness were deposited on single crystal silicon by means of pulse laser ablating graphet target at room temprature.
用激光烧蚀石墨靶方法在单晶硅衬底表面沉积了不同非晶碳。
Several amorphic carbon films with different thickness were deposited on single crystal silicon by means of pulse laser ablating graphet target at room temprature.
用激光烧蚀石墨靶方法在单晶硅衬底表面沉积了不同非晶碳。
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