The peaks of localized energy states were separated from the detrapping current curves by means of poling temperature scanning method.
通过热释极化温度扫描法分离出对解俘获流贡献各局域能。
The peaks of localized energy states were separated from the detrapping current curves by means of poling temperature scanning method.
通过热释极化温度扫描法分离出对解俘获流贡献各局域能。
Also, High electric field annealing of stressed PMOSFET and detrapping of trapped electrons on the gate oxide are studied deeply.
点研究了退化PMOS器件高退火效应和氧化层陷阱退陷阱机制。
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