The band edge excitonic transitions were measured by the reflectivity and photoluminescence measurements.
利用反射及光激萤光量测能隙边缘的激跃迁。
The band edge excitonic transitions were measured by the reflectivity and photoluminescence measurements.
利用反射及光激萤光量测能隙边缘的激跃迁。
III-V semiconductor,isoelectronic trap,photoluminescence,Raman scattering,Time-resolved photoluminescence,ordered and disordered structure.
族半导体,等电,光致发光,曼散射,时荧光谱,有序结构,无序结构
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