The jitter is less than 3ns when the switch breakdown at front edge under the pluse with 400ns risetime, while the jitter shorts to about 1ns under the pulse with 80ns risetime.
引入紫外预电离后,开关大大减小,400ns沿脉下开关可小于3ns,80ns沿脉时开关1ns。
The jitter is less than 3ns when the switch breakdown at front edge under the pluse with 400ns risetime, while the jitter shorts to about 1ns under the pulse with 80ns risetime.
引入紫外预电离后,开关大大减小,400ns沿脉下开关可小于3ns,80ns沿脉时开关1ns。
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